any changing of specification will not be informed individual SS8550T pnp silicon general purpose transistor power dissipation p cm : 1 w collector current i cm : -1.5 a collector-base voltage features http://www.secosgmbh.com elektronische bauelemente parameter symbol test conditions min typ max unit collector- base breakdown voltage v (br)cbo ic= -100 0 a i e =0 -40 v collector-emi tter breakdown voltage v (br)ceo ic= -0.1ma i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e =-100 0 a i c =0 -5 v collector cut- off current i cbo v cb =-40 v , i e =0 -0.1 0 a collector cut- off current i ceo v ce =-20v , i b =0 -0.1 0 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 0 a h fe(1) v ce =-1v, i c = -100ma 85 400 dc current gain h fe(2) v ce =-1v, i c = -800ma 40 collector- emitter saturation voltage v ce (sat) i c =-800 ma, i b =-80ma -0.5 v base- emitter saturation voltage v be (sat) i c =-800 ma, i b =-80m a -1.2 v transition frequency f t v ce =-10v, i c = -50ma f= 30mhz 100 mhz classification of h fe(1) rank b c d e range 85-160 120-200 160-300 300-400 electrical characteristics ( tamp.=25 o c unless otherwise specified) v (br)cbo : - 40 v operating & storage junction temperature t j , t stg : - 55 o c ~ + 150 o c 1 2 to-92 1. emitter 2. bass . collector 1 2 3 3 2 1 3 3 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual s s 8 5 5 0 t p n p s i l i c o n g e n e r a l p u r p o s e t r a n s i s t o r http://www.secosgmbh.com elektronische bauelemente ical haracteristics iure tatic haracteristic iure current ain iure baseemitter aturation oltae ollectoremitter aturation oltae iure baseemitter n oltae iure ollector utut aacitance iure urrent ain banith rouct -0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -0.2 -0.3 -0.4 -0.5 i b =-4.0ma i b =-3.5ma i b =-3.0ma i b =-2.5ma i b =-2.0ma i b =-1.5ma i b =-1.0ma i b =-0.5ma i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 -1000 1 10 100 1000 v ce = -1v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -1000 -10 -100 -1000 -10000 v ce(sat) v be(sat) i c =10i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce = -1v i c [ma], collector current v be [v], base-emitter voltage -1 -10 -100 -1000 1 10 100 f=1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 -100 -1000 10 100 1000 v ce =-10v f t [mhz], current gain-bandwidth product i c [ma], collector current 01-jun-2002 rev. a page 2 of 2
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